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{\large\bf Quasiparticle and electron shot noise in the FQHE regime} \\

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{\underline {D.C. Glattli}}, V. Rodriguez, H. Perrin and P. Roche

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{\small{\em
Service de Physique de l'Etat Condens\'e, CEA Saclay, 
F-91191 Gif-sur-Yvette, France}}\\
{\tt cglattl@spec.saclay.cea.fr} \\
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Y. Jin and B. Etienne

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{\small{\em
Laboratoire de Microstructures et Micro\'electronique, C.N.R.S.,
B.P. 107, F-92225 Bagneux, France}}
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\noindent
We present shot noise measurements in the Fractional Quantum Hall regime at $%
\nu =1/3$ when the fractional edges are coupled by an artificial impurity,
namely a Quantum Point Contact. For weak coupling and large voltage, recent
experiments have established that the current noise power $S_{I}$ is
proportional to the {\it backscattered current} $I_{B}$ and to the
fractional charge $e/3$. For low voltage, Chiral Luttinger liquid models
suggested a renormalization of the coupling strength, even with weak bare
coupling, leading to strong backscattering and to a noise power proportional
to the {\it transmitted current} $I$ and to the bare electronic charge. We
discuss here new noise measurements which partly confirm such an important
prediction.

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