Universität Augsburg
Institut für Physik


Udo Schwingenschlögl

• Exciton dissociation by topological edge states
  Yanshan University, Qinhuangdao, China, 14.8.2024
  

• Exciton dissociation by topological edge states
  Qingdao University of Science and Technology, China, 12.8.2024
  

• Exciton dissociation by topological edge states
  Prince Sattam bin Abdulaziz University, Al-Kharj, Saudi Arabia, 19.5.2024
  

• Exciton dissociation by topological edge states
  Centre Interdisciplinaire de Nanoscience de Marseille, France, 13.5.2024
  

• Exciton dissociation by topological edge states
  University of Waterloo, Canada, 2.5.2024
  

• Exciton dissociation by topological edge states
  University of Alberta, Edmonton, Canada, 1.5.2024
  

• Exciton dissociation by topological edge states
  Stanford University, United States of America, 29.4.2024
  

• Exciton dissociation by topological edge states
  University of Pavia, Italy, 26.2.2024
  

• Exciton dissociation by topological edge states
  American University of the Middle East, Eqaila, Kuwait, 20.2.2024
• Predicting the gas sensing performance of 2D materials
  Huazhong University of Science and Technology, China, 16.12.2022 (video presentation)
• Predicting the gas sensing performance of 2D materials
  Chemistry and Biochemistry Seminar Series, Wilfrid Laurier University, Waterloo, Canada, 11.11.2022 (video presentation)
• Predicting the gas sensing performance of 2D materials
  University of Thessaly, Volos, Greece, 2.11.2022
• Predicting the gas sensing performance of 2D materials
  Physics Colloquium, University of Buffalo, United States of America, 29.9.2022
• Predicting the gas sensing performance of 2D materials
  Materials Science Seminar, Tor Vergata University of Rome, Italy, 20.9.2022
• Predicting the gas sensing performance of 2D materials
  Rice University, Houston, United States of America, 5.8.2022
• Predicting the gas sensing performance of 2D materials
  Purdue University, West Lafayette, United States of America, 2.8.2022
• Predicting the gas sensing performance of 2D materials
  Chongqing University, China, 28.5.2020 (video presentation)
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Khalifa University, Abu Dhabi, United Arab Emirates, 3.2.2020
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Okinawa Institute of Science and Technology, Onna, Japan, 14.1.2020
• Obstacles and possible solutions on the way to valley-polarized 2D materials
  Universität Siegen, Germany, 31.10.2019
• Obstacles and possible solutions on the way to valley-polarized 2D materials
  Central South University, Changsha, China, 5.9.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Universität Leipzig, Germany, 3.6.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  University of Iceland, Reykjavík, Iceland, 29.5.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, 27.3.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Wilfrid Laurier University, Waterloo, Canada, 19.3.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  University of Manitoba, Winnipeg, Canada, 18.3.2019
• Ab-initio calculations of the thermoelectric properties of MXenes
  National Chemical Laboratory, Pune, India, 11.2.2019
• Ab-initio calculations of the thermoelectric properties of MXenes
  Indian Institute of Science Education and Research, Pune, India, 11.2.2019
• Elemental 2D materials beyond graphene: Insights from computational theory
  Uppsala Universitet, Sweden, 5.2.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Wuhan Institute of Physics and Mathematics, China, 18.1.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Tsinghua University, Beijing, China, 17.1.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Beijing Institute of Technology, China, 16.1.2019
• Elemental 2D materials beyond graphene: Insights from computational theory
  Changchun Institute of Optics, Fine Mechanics, and Physics, China, 15.1.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  University of Electronic Science and Technology of China, Chengdu, China, 14.1.2019
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Shanghai Institute of Optics and Fine Mechanics, China, 11.1.2019
• Computational physics and materials science in energy research
  SABIC Corporate Research and Innovation Center, Thuwal, Saudi Arabia, 10.12.2018
• High performance first-principles computations of the lattice thermal conductivity and implications for thermoelectric materials
  King Abdulaziz University, Jeddah, Saudi Arabia, 22.11.2018
• 2D thermoelectric materials: Role of the lattice thermal conductivity
  Institute for Research and Medical Consultations Distinguished Scientists Seminar, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia, 21.11.2018
• Atomic modeling of water-oil-rock interfaces
  Saudi Aramco, Dhahran, Saudi Arabia, 25.7.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  ShanghaiTech University, China, 19.6.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  Luleå Tekniska Universitet, Sweden, 30.5.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  Birla Institute of Technology & Science, Dubai, United Arab Emirates, 18.4.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  Institute of Physics of the Czech Academy of Sciences, Prague, Czech Republic, 13.4.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  SFB/TRR 173 Sonderseminar, Johannes Gutenberg-Universität Mainz, Germany, 11.4.2018
• Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS₂
  Indian Institute of Technology Jodhpur, India, 6.4.2018
• Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS₂
  Indian Institute of Technology Delhi, India, 4.4.2018
• Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS₂
  Indian Institute of Technology Gandhinagar, India, 3.4.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  University of Mumbai, India, 2.4.2018
• Elemental 2D materials beyond graphene: Insights from computational theory
  Condensed Matter, Biological Physics, Electrical and Computer Engineering Seminar, University of Missouri, Columbia, United States of America, 14.2.2018
• Substrate effects on silicene and how to exploit them
  Department of Physics Condensed Matter Theory Seminar, Northeastern University, Boston, United States of America, 12.2.2018
• First-principles calculations in materials science: 2D examples
  Institut Català Nanociència i Nanotecnologia, Bellaterra, Spain, 20.12.2017
• Exotic topological phase transitions in TlBiS₂ and monolayer AsSb
  King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, 4.12.2017
• Substrate effects on silicene and how to exploit them
  King Abdulaziz University, Jeddah, Saudi Arabia, 12.11.2017
• Substrate effects on silicene and how to exploit them
  Shenzhen University, China, 20.10.2017
• Substrate effects on silicene and how to exploit them
  Soochow University, Suzhou, China, 19.10.2017
• First-principles predictions of substrate effects on silicene
  Wright State University, Dayton, United States of America, 22.9.2017
• First-principles predictions of substrate effects on silicene
  South China University of Technology, Guangzhou, China, 8.9.2017
• Exotic topological phase transitions in TlBiS₂ and monolayer AsSb
  Extreme Light Infrastructure - Attosecond Light Pulse Source, Szeged, Hungary, 12.5.2017
• Designing topological states by pressure, strain, and functionalization
  University of Belgrade, Serbia, 10.5.2017
• Exotic topological phase transitions in TlBiS₂ and monolayer AsSb
  National Center of Scientific Research Demokritos, Athens, Greece, 8.5.2017
• Designing topological states by pressure, strain, and functionalization
  Maria Curie Skłodowska University, Lublin, Poland, 11.4.2017
• Potential and limitations of 2D materials: Insights from computational theory
  Seminar aus Halbleiterphysik und Nanotechnologie, Montanuniversität Leoben, Austria, 4.4.2017
• Designing topological states by pressure, strain, and functionalization
  Universität Leipzig, Germany, 15.02.2017

• Designing topological states by pressure, strain, and functionalization
  California State University, Northridge, United States of America, 20.1.2017

• Designing topological states by pressure, strain, and functionalization
  Colorado School of Mines, Golden, United States of America, 18.1.2017

• DFT (density functional theory) calculations in materials chemistry: An introduction
  College of Science and Mathematics Research Seminar, University of West Georgia, United States of America, 13.1.2017

• Potential and limitations of 2D materials: Insights from computational theory
  Materialwissenschaftliches Kolloquium, Universität Stuttgart, Germany, 22.11.2016
• Potential and limitations of 2D materials: Insights from computational theory
  Physikalisches Kolloquium, Universität Augsburg, Germany, 21.11.2016
• Silicene: A functional material for future electronics?
  Beijing Institute of Technology, China, 17.10.2016
• Silicene: A functional material for future electronics?
  University of Toronto, Canada, 13.10.2016
• Silicene: A functional material for future electronics?
  Departments of Chemistry, Physics and Astronomy Research Seminar, University of Manitoba, Winnipeg, Canada, 11.10.2016
• First-principles predictions of substrate effects on silicene
  Chongqing University, China, 7.6.2016
• First-principles predictions of substrate effects on silicene
  Southwest Jiaotong University, Chengdu, China, 3.6.2016
• First-principles predictions of substrate effects on silicene
  Wuhan Institute of Physics and Mathematics, China, 1.6.2016
• First-principles predictions of substrate effects on silicene
  Nanjing Tech University, China, 30.5.2016
• First-principles predictions of substrate effects on silicene
  Istituto Italiano di Tecnologia, Genova, Italy, 9.5.2016
• Silicene: A functional material for future electronics?
  Joint Chemical Engineering - Integrated Materials Design Centre Seminar, University of New South Wales, Sydney, Australia, 28.4.2016
• Silicene: A functional material for future electronics?
  Electronic Materials Engineering Seminar, Australian National University, Canberra, Australia, 26.4.2016
• Silicene: A functional material for future electronics?
  Indian Institute of Technology Roorkee, India, 23.4.2016
• Silicene: A functional material for future electronics?
  Indian Institute of Technology Gandhinagar, India, 20.4.2016
• First-principles predictions of substrate effects on silicene
  Texas A&M University, Doha, Qatar, 7.4.2016
• First-principles predictions of substrate effects on silicene
  Qatar Environment & Energy Research Institute, Doha, Qatar, 7.4.2016
• Insights into two-dimensional materials from first-principles calculations
  SFB/TR 49 Kolloquium, Johannes Gutenberg-Universität Mainz, Germany, 3.12.2015
• Manipulating the electronic structure of transition-metal dichalcogenide monolayer systems
  Imperial College London, United Kingdom, 14.8.2015
• Manipulating the electronic structure of transition-metal dichalcogenide monolayer systems
  University of Oxford, United Kingdom, 13.8.2015
• Insights into two-dimensional materials from first-principles calculations
  Institute for Materials Science Lecture Series, Los Alamos National Laboratory, United States of America, 22.7.2015
• Insights into two-dimensional materials from first-principles calculations
  University of Illinois at Chicago, United States of America, 20.7.2015
• Two-dimensional transition-metal dichalcogenides with tailored properties
  Texas A&M University, Doha, Qatar, 24.3.2015
• All-2D semiconductor/metal contacts
  Indian Institute of Technology Roorkee, India, 20.2.2015
• All-2D semiconductor/metal contacts
  Indian Institute of Technology Bombay, Mumbai, India, 17.2.2015
• Strategies for enhancing the thermoelectric performance of oxides
  Department of Chemistry, University of Reading, United Kingdom, 3.2.2015
• Strategies for enhancing the thermoelectric performance of oxides
  Faculty of Engineering and Computing, Coventry University, United Kingdom, 2.2.2015
• Materials design by first-principles calculations
  SABIC Corporate Research and Innovation Center, Thuwal, Saudi Arabia, 4.1.2015
• Strategies for enhancing the thermoelectric performance of oxides
  Condensed Matter Physics Seminar, National Technical University of Athens, Greece, 18.12.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America, 19.11.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  IBM Research Almaden, San Jose, United States of America, 18.11.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  Boston University, United States of America, 17.11.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  Cornell University, Ithaca, United States of America, 14.11.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  Department of Physics & Astronomy Colloquium, West Virginia University, Morgantown, United States of America, 13.11.2014
• Two-dimensional transition-metal dichalcogenides with tailored properties
  University of Toronto, Canada, 9.9.2014
• A first-principles perspective on two-dimensional transition-metal dichalcogenides
  Sonderseminar über die Physik nanostrukturierter Systeme (NIM), Ludwig-Maximilians-Universität München, Germany, 28.5.2014
• A first-principles perspective on two-dimensional transition-metal dichalcogenides
  Nordic Institute for Theoretical Physics, Stockholm, Sweden, 26.5.2014
• A first-principles perspective on two-dimensional transition-metal dichalcogenides
  Indian Institute of Technology Jodhpur, India, 3.5.2014
• Two-dimensional materials based on transition-metal dichalcogenides
  National Center of Scientific Research Demokritos, Athens, Greece, 18.12.2013
• Spin-polarisation in transition-metal dichalcogenides
  Engineering & Innovation Seminar, The Open University, Milton Keynes, United Kingdom, 25.11.2013
• Growth of MoS₂ on SiO₂/Si and heterojunctions with Ti₂C, Ti₂CF₂, and Ti₂C(OH)₂
  Physics Colloquium, Jacobs University Bremen, Germany, 15.11.2013
• Electronic and mechanical properties of 2D honeycomb materials
  L'Ecole Nationale Supérieure d'Ingénieurs de Caen, France, 16.4.2013
• Electronic and mechanical properties of 2D honeycomb materials
  Johannes-Keppler-Universität Linz, Austria, 5.4.2013
• What can first principles calculations tell us about low dimensional materials?
  Inorganic and Materials Chemistry Seminar, University College London, United Kingdom, 20.2.2013
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  University of Oxford, United Kingdom, 31.1.2013
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  Cornell University, Ithaca, United States of America, 18.1.2013
• What can first principles calculations tell us about low dimensional materials?
  Department of Chemistry and Earth Sciences Seminar, Qatar University, Doha, Qatar, 3.12.2012
• Electronic and mechanical properties of 2D honeycomb materials
  Instituto International de Física, Universidade Federal do Rio Grande do Norte, Natal, Brazil, 27.9.2012
• First principles description of correlated materials
  TRR80 Summer School 2012, Frauenchiemsee, Germany, 3.9.2012
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  Texas A&M University, Doha, Qatar, 28.6.2012
• Electronic and mechanical properties of 2D honeycomb materials
  Trinity College Dublin, Ireland, 19.6.2012
• Electronic and mechanical properties of 2D honeycomb materials
  University College Dublin, Ireland, 18.6.2012
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  IBM Research Almaden, San Jose, United States of America, 25.4.2012
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  Stanford University, United States of America, 24.4.2012
• First principles calculations for oxide thermoelectrics
  Clemson University, United States of America, 4.4.2012
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, 13.11.2011
• Substrate and intercalation effects on graphene and silicene: A first principles perspective
  Imperial College London, United Kingdom, 7.11.2011
• Self-doping at structural inhomogeneities: Two illustrative examples
  L'Ecole Nationale Supérieure d'Ingénieurs de Caen, France, 20.7.2011
• Self-doping at structural inhomogeneities: Two illustrative examples
  Séminaire Théorie de la Matière Condensée sur le Plateau, CEA Saclay, France, 7.4.2011
• Electronic states and self-doping at YBCO interfaces and grain boundaries
  Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany, 4.4.2011
• Ein Problem zur Modellbildung an der Grenze von Physik und Chemie: Dotiertes Silizium
  Universität Augsburg, Germany, 25.2.2011
• Self-doping at structural inhomogeneities: Two illustrative examples
  Nanchang Hangkong University, China, 2.12.2010
• Self-doping at structural inhomogeneities: Two illustrative examples
  Cinvestav Querétaro, Mexico, 3.11.2010
• Electronic structure calculations in materials science
  King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, 31.5.2010
• Electronic states and self-doping at YBCO interfaces and grain boundaries
  Theoretisch-Physikalisches Symposium, Universität Duisburg-Essen, Duisburg, Germany, 17.12.2009
• Electronic states and self-doping at YBCO interfaces and grain boundaries
  Universität Regensburg, Sonderkolloquium, Germany, 19.6.2009
• Electronic states and self-doping at YBCO interfaces and grain boundaries
  Johannes-Keppler-Universität Linz, Austria, 30.4.2009
• Application of DFT calculations in interface and surface science
  Max-Planck-Institut für Eisenforschung, Düsseldorf, Germany, 11.12.2008
• Electronic structure calculations in materials science
  Imperial College London, United Kingdom, 7.7.2008
• Investigating interfaces of high-T_c materials by electronic structure calculations
  Eberhard-Karls-Universität Tübingen, Germany, 25.6.2008
• Verzerrung des Wählerwillens infolge der Mandatszuteilung bei Verhältniswahlen
  Universität St. Gallen, Switzerland, 18.4.2008
• Grundlagen der Datenübertragung
  Hochschule Deggendorf, Germany, 13.2.2008
• Electronic structure in inhomogeneous geometries: From surfaces to nanocontacts
  Theoretisch-Physikalisches Kolloquium, Technische Universität Kaiserslautern, Germany, 5.2.2008
• Electronic structure in inhomogeneous geometries: From surfaces to nanocontacts
  Justus-Liebig-Universität Gießen, Germany, 24.1.2008
• Softwareeinrichtung eines Messplatzes: Vom Gerätetreiber über die Auswertung bis zur Datenbank
  Hochschule Magdeburg-Stendal, Magdeburg, Germany, 16.7.2007
• Integralsätze und Ihre Anwendung in der Elektrodynamik
  Ruhr-Universität Bochum, Germany, 6.7.2007
• Ab-initio electronic structure calculations for crystalline solids
  L'Ecole Nationale Supérieure d'Ingénieurs de Caen, France, 1.6.2007
• Symmetrie als Grundprinzip des Geometrieunterrichts in der Sekundarstufe I
  Pädagogische Hochschule Heidelberg, Germany, 8.5.2007
• Verzerrung des Wählerwillens infolge der Mandatszuteilung bei Verhältniswahlen
  BPV-Fortbildung Schwaben Mathematik/Physik, Augsburg, Germany, 26.3.2007
• Ordering phenomena in the Magnéli series M_nO_2n-1 (M=V,Ti)
  SFB 668 Sonder-Kolloquium, Universität Hamburg, Germany, 5.7.2006

Send E-Mail

---